Paper
23 August 2013 Terahertz plasmon polariton formed in a Fabry–Pérot cavity and a grating-coupled two-dimensional electron gas
Yong-dan Huang, Hua Qin, Bao-shun Zhang, Jing-bo Wu, Gao-chao Zhou, Biao-bing Jin
Author Affiliations +
Proceedings Volume 8909, International Symposium on Photoelectronic Detection and Imaging 2013: Terahertz Technologies and Applications; 89090D (2013) https://doi.org/10.1117/12.2032899
Event: ISPDI 2013 - Fifth International Symposium on Photoelectronic Detection and Imaging, 2013, Beijing, China
Abstract
Localized plasmon modes are excited and probed in a large-area grating-gate GaN/AlGaN high-electron-mobility transistor structure embedded in a Fabry-Pérot cavity using a terahertz time-domain spectroscopy (THz-TDS) at cryogenic temperature. Determined by the length of grating finger and the electron concentration, the frequency of localized plasmon modes can be continuously tuned by the gate voltage in the spectral range from 0.1 THz to 1.5 THz. When the plasmon frequency is tuned to be in resonance with the terahertz Fabry-Pérot cavity mode, a strong coupling between the plasmon mode and the cavity mode is observed and the terahertz plasmon-polaritons are formed in such a cavity-coupled two-dimensional electron system. The electromagnetic simulations have confirmed the strong coupling between them.
© (2013) COPYRIGHT Society of Photo-Optical Instrumentation Engineers (SPIE). Downloading of the abstract is permitted for personal use only.
Yong-dan Huang, Hua Qin, Bao-shun Zhang, Jing-bo Wu, Gao-chao Zhou, and Biao-bing Jin "Terahertz plasmon polariton formed in a Fabry–Pérot cavity and a grating-coupled two-dimensional electron gas", Proc. SPIE 8909, International Symposium on Photoelectronic Detection and Imaging 2013: Terahertz Technologies and Applications, 89090D (23 August 2013); https://doi.org/10.1117/12.2032899
Advertisement
Advertisement
RIGHTS & PERMISSIONS
Get copyright permission  Get copyright permission on Copyright Marketplace
KEYWORDS
Plasmons

Terahertz radiation

Picosecond phenomena

Terahertz spectroscopy

Cryogenics

Field effect transistors

Heterojunctions

Back to Top