Paper
19 September 2013 ZnMgO solar blind detectors: from material to systems
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Abstract
Zinc oxide (ZnO) is a unique wide bandgap biocompatible material system exhibiting both semiconducting and piezoelectric properties that has a diverse group of growth morphologies. Bulk ZnO has a bandgap of 3.37 eV that corresponds to emissions in the ultraviolet (UV) spectral band. Highly ordered vertical arrays of ZnO nanowires (NWs) have been grown on substrates including silicon, SiO2, GaN, and sapphire using a metal organic chemical vapor deposition (MOCVD) growth process. The structural and optical properties of the grown vertically aligned ZnO NW arrays were characterized by scanning electron microscopy (SEM), X-ray diffraction (XRD), and photoluminescence (PL) measurements. Compared to conventional UV sensors, detectors based on ZnO NWs offer high UV sensitivity and low visible sensitivity, and are expected to exhibit low noise, high quantum efficiency, extended lifetimes, and have low power requirements. The photoresponse switching properties of NW array based sensing devices have been measured with intermittent exposure to UV radiation, where the devices were found to switch between low and high conductivity states at time intervals on the order of a few seconds. Envisioned applications for such sensors/FPAs potentially include threat detection and threat warning.
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Mehdi F. Anwar, Abdiel Rivera, Anas Mazady, Hung Chi Chou, John W. Zeller, and Ashok K. Sood "ZnMgO solar blind detectors: from material to systems", Proc. SPIE 8868, Infrared Sensors, Devices, and Applications III, 88680B (19 September 2013); https://doi.org/10.1117/12.2032204
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Cited by 2 scholarly publications.
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KEYWORDS
Zinc oxide

Ultraviolet radiation

Metalorganic chemical vapor deposition

Silica

Gallium nitride

Scanning electron microscopy

Sensors

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