Ferroelectric memory element based on thin film field effect transistor

A. R. Poghosyan; N. R. Aghamalyan; E. Y. Elbakyan; R. Guo; R. K. Hovsepyan

doi:10.1117/12.2027429

25 September 2013 Ferroelectric memory element based on thin film field effect transistor

A. R. Poghosyan, N. R. Aghamalyan, E. Y. Elbakyan, R. Guo, R. K. Hovsepyan

Proceedings Volume 8847, Photonic Fiber and Crystal Devices: Advances in Materials and Innovations in Device Applications VII; 88471R (2013) https://doi.org/10.1117/12.2027429
Event: SPIE Optical Engineering + Applications, 2013, San Diego, California, United States

Abstract

We report the preparation and investigation of ferroelectric field effect transistors (FET) using ZnO:Li films with high field mobility of the charge carriers as a FET channel and as a ferroelectric active element simultaneously. The possibility for using of ferroelectric FET based on the ZnO:Li films in the ZnO:Li/LaB₆ heterostructure as a bi-stable memory element for information recording is shown. The proposed ferroelectric memory structure does not manifest a fatigue after multiple readout of once recorded information.

Citation Download Citation

A. R. Poghosyan, N. R. Aghamalyan, E. Y. Elbakyan, R. Guo, and R. K. Hovsepyan "Ferroelectric memory element based on thin film field effect transistor", Proc. SPIE 8847, Photonic Fiber and Crystal Devices: Advances in Materials and Innovations in Device Applications VII, 88471R (25 September 2013); https://doi.org/10.1117/12.2027429

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