Paper
25 September 2013 PbS quantum dot thin film solar cells using a CdS window layer
Khagendra P. Bhandari, Hasitha Mahabaduge, Jianbo Gao, Randy J. Ellingson
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Abstract
We describe results of our investigations of the structural, optical, and electronic properties of PbS-QD films fabricated using layer-by-layer dip coating based on 1,2-ethanedithiol as an insolubilizing agent. Our investigations extend to a study of the photovoltaic properties of heterojunction thin film solar cells fabricated by sputter-deposition of a CdS ntype thin film followed by deposition of a PbS-QD thin film. Our CdS/PbS-QD solar cells exhibit open circuit voltage in excess of previously reported PbS-QD solar cells. Under standard simulated AM1.5G illumination, we observe short circuit current density as high as 12 mA cm-2, open circuit voltage as high as 0.65 V, and a maximum efficiency of 3.3%.
© (2013) COPYRIGHT Society of Photo-Optical Instrumentation Engineers (SPIE). Downloading of the abstract is permitted for personal use only.
Khagendra P. Bhandari, Hasitha Mahabaduge, Jianbo Gao, and Randy J. Ellingson "PbS quantum dot thin film solar cells using a CdS window layer", Proc. SPIE 8824, Next Generation (Nano) Photonic and Cell Technologies for Solar Energy Conversion IV, 88240I (25 September 2013); https://doi.org/10.1117/12.2025307
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Cited by 1 scholarly publication.
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KEYWORDS
Cadmium sulfide

Solar cells

Lead

Thin film solar cells

Thin films

Excitons

Absorbance

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