Two-step growth and fabrication of thermoelectric devices employing indium phosphide nanowire networks

Kate J. Norris; Junce Zhang; David M. Fryauf; Nobuhiko P. Kobayashi

doi:10.1117/12.2026345

19 September 2013 Two-step growth and fabrication of thermoelectric devices employing indium phosphide nanowire networks

Kate J. Norris, Junce Zhang, David M. Fryauf, Nobuhiko P. Kobayashi

Author Affiliations +

Proceedings Volume 8820, Nanoepitaxy: Materials and Devices V; 88200Q (2013) https://doi.org/10.1117/12.2026345
Event: SPIE NanoScience + Engineering, 2013, San Diego, California, United States

Abstract

The ability to make a good electrical/thermal contact to a large area filled with semiconductor nanowires has been a major engineering challenge in developing this type of thermoelectric devices. A practical fabrication process of a top electrical/thermal contact onto a network of randomly oriented intersecting semiconductor nanowires was designed by implementing a sequence of two separated metal organic chemical vapor deposition processes for indium phosphide. In the first step, a nanowire network was grown on a substrate with indium phosphide nanowires grown axially. Subsequently, growth temperature and pressure were altered to change the axial growth to lateral growth that promoted the formation of indium phosphide extending over multiple nanowires. Possible growth mechanisms during the lateral growth and structural properties of the laterally grown segment will be discussed.

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Kate J. Norris, Junce Zhang, David M. Fryauf, and Nobuhiko P. Kobayashi "Two-step growth and fabrication of thermoelectric devices employing indium phosphide nanowire networks", Proc. SPIE 8820, Nanoepitaxy: Materials and Devices V, 88200Q (19 September 2013); https://doi.org/10.1117/12.2026345

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