Semiconductor-Metal Eutectic Composites For High-Power Switching

B. M. Ditchek; B. G. Yacobi

doi:10.1117/12.943644

6 April 1988 Semiconductor-Metal Eutectic Composites For High-Power Switching

B. M. Ditchek, B. G. Yacobi

Proceedings Volume 0871, Space Structures, Power, and Power Conditioning; (1988) https://doi.org/10.1117/12.943644
Event: 1988 Los Angeles Symposium: O-E/LASE '88, 1988, Los Angeles, CA, United States

Abstract

A novel electronic material, a Si-TaSi₂ semiconductor-metal eutectic composite, offers promise in high-power switching applications. In this paper, the basic electronic properties of the material are briefly described. It is shown that the in situ Schottky junctions inherent to the material can be used to fabricate transistors. The advantages of these devices are their volumetric current transport and their unusual resistance to avalanche breakdown.

Citation Download Citation

B. M. Ditchek and B. G. Yacobi "Semiconductor-Metal Eutectic Composites For High-Power Switching", Proc. SPIE 0871, Space Structures, Power, and Power Conditioning, (6 April 1988); https://doi.org/10.1117/12.943644

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