Natural oxide thickness measurements on the test silicon relief pitch structure

M. N. Filippov; M. A. Ermakova; V. P. Gavrilenko; A. A. Kuzin; A. Yu Kuzin; A. A. Kuzmin; V. B. Mityukhlyaev; A. V. Rakov; P. A. Todua; A. V. Zablotskiy

doi:10.1117/12.2017079

8 January 2013 Natural oxide thickness measurements on the test silicon relief pitch structure

M. N. Filippov, M. A. Ermakova, V. P. Gavrilenko, A. A. Kuzin, A. Yu Kuzin, A. A. Kuzmin, V. B. Mityukhlyaev, A. V. Rakov, P. A. Todua, A. V. Zablotskiy

Author Affiliations +

Proceedings Volume 8700, International Conference Micro- and Nano-Electronics 2012; 87000U (2013) https://doi.org/10.1117/12.2017079
Event: International Conference on Micro-and Nano-Electronics 2012, 2012, Zvenlgorod, Russian Federation

Abstract

The study was performed on a test step relief structure of monocrystalline silicon. There was experimentally measured the thickness of the natural oxide on this structure consisting of a set of elements (protrusions) with a trapezoidal profile and 2.0 μm step size, upper base about 10 nm, height about 500 nm. The tilt angle of side face with respect to the lower base was 54.7°. The entire structure was covered with a natural oxide film that appeared at room temperature, the thickness of which is being measured using a transmission electron microscope with atomic resolution by the observed pattern in the direct mode resolution of the crystal structure. In order to calibrate the measurements a distance between {111} planes was used. It was shown experimentally, that in the area of this bottom the natural oxide thickness increases from 2.3 ± 0.2 nm in the middle of the bottom to 3.0 ± 0.2 nm and 4.5 ± 0.2 nm at the left and right edges of the bottom, respectively.

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M. N. Filippov, M. A. Ermakova, V. P. Gavrilenko, A. A. Kuzin, A. Yu Kuzin, A. A. Kuzmin, V. B. Mityukhlyaev, A. V. Rakov, P. A. Todua, and A. V. Zablotskiy "Natural oxide thickness measurements on the test silicon relief pitch structure", Proc. SPIE 8700, International Conference Micro- and Nano-Electronics 2012, 87000U (8 January 2013); https://doi.org/10.1117/12.2017079

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