A gold free fully copper metalized GaAs pHEMT for the high frequency applications

Evgeny V. Erofeev; Valery A. Kagadei; Artyom I. Kazimirov

doi:10.1117/12.2016911

8 January 2013 A gold free fully copper metalized GaAs pHEMT for the high frequency applications

Evgeny V. Erofeev, Valery A. Kagadei, Artyom I. Kazimirov

Proceedings Volume 8700, International Conference Micro- and Nano-Electronics 2012; 87000M (2013) https://doi.org/10.1117/12.2016911
Event: International Conference on Micro-and Nano-Electronics 2012, 2012, Zvenlgorod, Russian Federation

Abstract

The Cu metalized GaAs pHEMTs using developed Pd/Ni/Ge/Mo/Cu and Cu/Ge based ohmic contacts and Ti/Mo/Cu 150 nm T-shape gate has been successfully fabricated for the high-frequency applications. The fabricated Cu metalized GaAs pHEMTs with Pd/Ni/Ge/Mo/Cu and Ge/Cu ohmic contacts had a transconductance peak of 440 and 320 mS/mm, maximum stable gain value was about 18.8 and 14.5 dB at frequency 10 GHz and current gain cut-off frequency was about 100 and 60 GHz, accordingly. The performance of the fully Cu metalized atomic hydrogen treated GaAs pHEMT with Cu/Ge ohmic contacts and Ti/Mo/Ge/Cu based T-gate was investigated. It was found, that such processing in an atomic hydrogen flow with density 10¹⁵ at. cm² s^-1 at room temperature during 5 min leads to reduce the contact resistance of Ge/Cu ohmic contacts by 1.6 times. The reduction in specific contact resistance is apparently caused by the action of the hydrogen atoms which minimise the rate of the oxidizing reactions and activate solid phase reactions forming the ohmic contact during the thermal treatment process. The fabricated fully Cu metalized GaAs pHEMT with atomic hydrogen processing had a transconductance peak of 380 mS/mm and current gain cut-off frequency was about 80 GHz. It is similar with performance of conventional gold base devices. The experimental results allow to consider the copper as perspective gold replacement in the GaAs MMIC production.

Citation Download Citation

Evgeny V. Erofeev, Valery A. Kagadei, and Artyom I. Kazimirov "A gold free fully copper metalized GaAs pHEMT for the high frequency applications", Proc. SPIE 8700, International Conference Micro- and Nano-Electronics 2012, 87000M (8 January 2013); https://doi.org/10.1117/12.2016911

ACCESS THE FULL ARTICLE

INSTITUTIONAL
Select your institution to access the SPIE Digital Library.

SELECT YOUR INSTITUTION

PERSONAL
Sign in with your SPIE account to access your personal subscriptions or to use specific features such as save to my library, sign up for alerts, save searches, etc.

PERSONAL SIGN IN

No SPIE Account? Create one

PURCHASE THIS CONTENT

SUBSCRIBE TO DIGITAL LIBRARY

50 downloads per 1-year subscription

Members: $195

Non-members: $335 ADD TO CART

25 downloads per 1 - year subscription

Members: $145

Non-members: $250 ADD TO CART

PURCHASE SINGLE ARTICLE

Includes PDF, HTML & Video, when available