Extendibility of self-aligned type multiple patterning for further scaling

Shohei Yamauchi; Arisa Hara; Kenichi Oyama; Sakurako Natori; Masatoshi Yamato; Hidetami Yaegashi

doi:10.1117/12.2011953

29 March 2013 Extendibility of self-aligned type multiple patterning for further scaling

Shohei Yamauchi, Arisa Hara, Kenichi Oyama, Sakurako Natori, Masatoshi Yamato, Hidetami Yaegashi

Proceedings Volume 8682, Advances in Resist Materials and Processing Technology XXX; 86821D (2013) https://doi.org/10.1117/12.2011953
Event: SPIE Advanced Lithography, 2013, San Jose, California, United States

Abstract

Photolithography has been a driving force behind semiconductor scaling, but the technology has been at a standstill since the development of 193-nm water-based immersion lithography. As a consequence, the double patterning process has become the standard technology for diverse types of semiconductor devices as a means of extending the life of 193-nm exposure technology. We have previously reported on the extendibility and versatility of the double patterning process, from pitch-doubling by self-aligned double patterning (SADP)[1] to pitch-quadrupling by self-aligned quadruple patterning (SAQP)[2]. We also reported on the effectiveness of SADP technology for increasing resolution in hole patterns. While waiting for the development of extreme ultraviolet (EUV) lithography tools to be completed, it will be necessary to search out possibilities for further semiconductor scaling using the double patterning process as the mainstream technique for extending the life of 193-nm immersion lithography.

Citation Download Citation

Shohei Yamauchi, Arisa Hara, Kenichi Oyama, Sakurako Natori, Masatoshi Yamato, and Hidetami Yaegashi "Extendibility of self-aligned type multiple patterning for further scaling", Proc. SPIE 8682, Advances in Resist Materials and Processing Technology XXX, 86821D (29 March 2013); https://doi.org/10.1117/12.2011953

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