Advanced electron beam resist requirements and challenges

Andrew Jamieson; Bennett Olson; Maiying Lu; Nathan Wilcox

doi:10.1117/12.2014527

29 March 2013 Advanced electron beam resist requirements and challenges

Andrew Jamieson, Bennett Olson, Maiying Lu, Nathan Wilcox

Proceedings Volume 8682, Advances in Resist Materials and Processing Technology XXX; 86820Y (2013) https://doi.org/10.1117/12.2014527
Event: SPIE Advanced Lithography, 2013, San Jose, California, United States

Abstract

Electron beam resists are critical to photomask production and have significant impacts on advanced semiconductor manufacturing. In this paper, we’ll discuss current and future challenges in electron beam resist development. These materials face many of the same issues as EUV resists, especially in their tradeoffs between resolution, dose and LER. However, electron beam exposure creates unique complications associated with backscattered electrons and charging. We’ll investigate these effects and the requirements and challenges that result.

Citation Download Citation

Andrew Jamieson, Bennett Olson, Maiying Lu, and Nathan Wilcox "Advanced electron beam resist requirements and challenges", Proc. SPIE 8682, Advances in Resist Materials and Processing Technology XXX, 86820Y (29 March 2013); https://doi.org/10.1117/12.2014527

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