Photoluminescence metrology for LED characterization in high volume manufacturing

Christopher J. Raymond; Zhiqiang Li

doi:10.1117/12.2013624

10 April 2013 Photoluminescence metrology for LED characterization in high volume manufacturing

Christopher J. Raymond, Zhiqiang Li

Proceedings Volume 8681, Metrology, Inspection, and Process Control for Microlithography XXVII; 86810P (2013) https://doi.org/10.1117/12.2013624
Event: SPIE Advanced Lithography, 2013, San Jose, California, United States

Abstract

In this paper we will review typical applications of photoluminescence (PL) metrology in high volume LED manufacturing environments. PL is a well-established method for analysis of semiconductor properties. The technique is non-contact, non-destructive and rapid. We will describe the principles of the measurement and review PL data from LED process wafers. We will discuss how PL measurement results like peak wavelength, dominant wavelength and PL intensity are obtained. We will summarize the accuracy, precision, stability and other considerations of the measurement. Finally, metrology considerations for manufacturing LEDs on large diameter substrates, including the possibility of 8” silicon substrates, will be presented.

Citation Download Citation

Christopher J. Raymond and Zhiqiang Li "Photoluminescence metrology for LED characterization in high volume manufacturing", Proc. SPIE 8681, Metrology, Inspection, and Process Control for Microlithography XXVII, 86810P (10 April 2013); https://doi.org/10.1117/12.2013624

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