Paper
27 February 2013 Multi-stacked silicon wire waveguides and couplers toward 3D optical interconnects
J. Kang, N. Nishiyama, Y. Atsumi, T. Amemiya, S. Arai
Author Affiliations +
Proceedings Volume 8630, Optoelectronic Interconnects XIII; 863008 (2013) https://doi.org/10.1117/12.2009456
Event: SPIE OPTO, 2013, San Francisco, California, United States
Abstract
The relationship between the propagation loss and roughness on multi-layered Si waveguides fabricated up to a 3rd layer was investigated. By reducing the surface and sidewall roughness of the waveguides, a low propagation loss of 3.7 dB/cm for the 3 layer a-Si:H waveguides was demonstrated. Furthermore, vertical coupling between multilayer waveguides was demonstrated by use of a grating-type vertical coupler. A coupling efficiency of 22% was obtained for 10 pairs of gratings with a period of 640 nm, even with a layer distance of 1μm.
© (2013) COPYRIGHT Society of Photo-Optical Instrumentation Engineers (SPIE). Downloading of the abstract is permitted for personal use only.
J. Kang, N. Nishiyama, Y. Atsumi, T. Amemiya, and S. Arai "Multi-stacked silicon wire waveguides and couplers toward 3D optical interconnects", Proc. SPIE 8630, Optoelectronic Interconnects XIII, 863008 (27 February 2013); https://doi.org/10.1117/12.2009456
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Cited by 8 scholarly publications and 1 patent.
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KEYWORDS
Waveguides

Protactinium

Wave propagation

Surface roughness

Silicon

Reactive ion etching

Optical circuits

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