High optical power ultraviolet superluminescent InGaN diodes

Anna Kafar; Szymon Stańczyk; Grzegorz Targowski; Robert Czernecki; Przemek Wiśniewski; Mike Leszczyński; Tadeusz Suski; Piotr Perlin

doi:10.1117/12.2002488

4 March 2013 High optical power ultraviolet superluminescent InGaN diodes

Anna Kafar, Szymon Stańczyk, Grzegorz Targowski, Robert Czernecki, Przemek Wiśniewski, Mike Leszczyński, Tadeusz Suski, Piotr Perlin

Author Affiliations +

Proceedings Volume 8625, Gallium Nitride Materials and Devices VIII; 86251S (2013) https://doi.org/10.1117/12.2002488
Event: SPIE OPTO, 2013, San Francisco, California, United States

Abstract

We present ultraviolet InGaN superluminescent diodes fabricated in a “j-shape” waveguide geometry. Under CW operation at room temperatures, devices emit optical power up to 80 mW at 395 nm with no tendency for lasing. The chip length was 1.5 mm. Emitted optical power was very sensitive to the device temperature. This effect limited the maximum optical power obtained in CW operation. With better packaging scheme better performance in CW regime should be achieved.

Citation Download Citation

Anna Kafar, Szymon Stańczyk, Grzegorz Targowski, Robert Czernecki, Przemek Wiśniewski, Mike Leszczyński, Tadeusz Suski, and Piotr Perlin "High optical power ultraviolet superluminescent InGaN diodes", Proc. SPIE 8625, Gallium Nitride Materials and Devices VIII, 86251S (4 March 2013); https://doi.org/10.1117/12.2002488

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