Latest developments in AlGaInN laser diode technology

S. P. Najda; P. Perlin; T. Suski; L. Marona; M. Boćkowski; M. Leszczyński; Przemyslaw Wisniewski; R. Czernecki; R. Kucharski; G. Targowski

doi:10.1117/12.2006079

27 March 2013 Latest developments in AlGaInN laser diode technology

S. P. Najda, P. Perlin, T. Suski, L. Marona, M. Boćkowski, M. Leszczyński, Przemyslaw Wisniewski, R. Czernecki, R. Kucharski, G. Targowski

Author Affiliations +

Proceedings Volume 8625, Gallium Nitride Materials and Devices VIII; 862518 (2013) https://doi.org/10.1117/12.2006079
Event: SPIE OPTO, 2013, San Francisco, California, United States

Abstract

The latest developments in AlGaInN laser diode technology are reviewed. The AlGaInN material system allows for laser diodes to be fabricated over a very wide range of wavelengths from u.v. to the visible, i.e., 380-530nm, by tuning the indium content of the laser GaInN quantum well. Ridge waveguide laser diode structures are fabricated to achieve single mode operation with optical powers of >100mW in the 400-420nm wavelength range with high reliability. Low defectivity and highly uniform TopGaN and Ammono GaN-substrates allow arrays and bars of nitride lasers to be fabricated. In addition, high power operation of AlGaInN laser diodes is demonstrated with the operation of a single chip, ‘mini-array’ consisting of a 3 stripe common p-contact at powers up to 2.5W cw in the 408-412 nm wavelength range and a 16 stripe common p-contact laser array at powers over 4W cw.

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S. P. Najda, P. Perlin, T. Suski, L. Marona, M. Boćkowski, M. Leszczyński, Przemyslaw Wisniewski, R. Czernecki, R. Kucharski, and G. Targowski "Latest developments in AlGaInN laser diode technology", Proc. SPIE 8625, Gallium Nitride Materials and Devices VIII, 862518 (27 March 2013); https://doi.org/10.1117/12.2006079

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