Optoelectronic Device Applications Of Doping Superlattices

Gottfried H Dohler

doi:10.1117/12.943403

16 May 1988 Optoelectronic Device Applications Of Doping Superlattices

Gottfried H Dohler

Proceedings Volume 0861, Quantum Wells and Superlattices in Optoelectronic Devices and Integrated Optics; (1988) https://doi.org/10.1117/12.943403
Event: 1987 Symposium on the Technologies for Optoelectronics, 1987, Cannes, France

Abstract

Doping superlattices, composed of alternating n- and p-doped semiconductor layers, possibly with intrinsic regions in between ("n-i-p-i structures") exhibit novel electrical and optical properties. Their potential for a wide variety of new electro-optical and opto-optical devices is discussed and recent results are reported.

Citation Download Citation

Gottfried H Dohler "Optoelectronic Device Applications Of Doping Superlattices", Proc. SPIE 0861, Quantum Wells and Superlattices in Optoelectronic Devices and Integrated Optics, (16 May 1988); https://doi.org/10.1117/12.943403

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