Paper
18 February 2013 High power (23W) vertical external cavity surface emitting laser emitting at 1180 nm
T. Leinonen, S. Ranta, M. Tavast, R. Epstein, G. Fetzer, . Sandalphon, N. Van Lieu, M. Guina
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Abstract
We report high power operation of a vertical external-cavity surface-emitting laser (VECSEL) operating around 1180 nm. The gain chip of the VECSEL comprises 10 strain-compensated GaInAs/GaAs quantum wells in a top-emitting configuration. A maximum output power of 23 W was achieved with a mount temperature of about 0 ‡C, and 20.5 W with the mount temperature of about 12 °C. By introducing a birefringent filter inside the laser cavity we demonstrate a tuning range of 67 nm. The gain chip was also used to construct a VECSEL for single-frequency operation. In this configuration, a maximum output power of about 11 W was recorded.
© (2013) COPYRIGHT Society of Photo-Optical Instrumentation Engineers (SPIE). Downloading of the abstract is permitted for personal use only.
T. Leinonen, S. Ranta, M. Tavast, R. Epstein, G. Fetzer, . Sandalphon, N. Van Lieu, and M. Guina "High power (23W) vertical external cavity surface emitting laser emitting at 1180 nm", Proc. SPIE 8606, Vertical External Cavity Surface Emitting Lasers (VECSELs) III, 860604 (18 February 2013); https://doi.org/10.1117/12.2004904
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Cited by 6 scholarly publications.
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KEYWORDS
Mirrors

Quantum wells

Optical filters

Laser resonators

Electronic filtering

Diamond

High power lasers

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