Grain growth study of electrochemically deposited CuInSe2 by rapid thermal annealing in sulfur atmosphere

Ashish Bhatia; M. A. Karmarkar; H. Meadows; P. J. Dale; M. A. Scarpulla

doi:10.1117/12.926972

15 October 2012 Grain growth study of electrochemically deposited CuInSe2 by rapid thermal annealing in sulfur atmosphere

Ashish Bhatia, M. A. Karmarkar, H. Meadows, P. J. Dale, M. A. Scarpulla

Author Affiliations +

Proceedings Volume 8549, 16th International Workshop on Physics of Semiconductor Devices; 85493B (2012) https://doi.org/10.1117/12.926972
Event: 16th International Workshop on Physics of Semiconductor Devices, 2011, Kanpur, India

Abstract

In order to upscale the production of thin film solar cells a cost effective and simple synthesis technique is required. Keeping this in mind we have investigated the effect of electrochemical deposition (ED) and inherently low thermal budget rapid thermal annealing (RTA) processing of CuInSe₂ in sulfur atmosphere. X-ray diffraction (θ-2θ) scans indicate increased grain size and improved crystallinity after RTA of ED films. Scanning electron microscopy images (SEM) suggest changes in surface morphology after sulfur incorporation. Raman spectroscopy results and temperature dependent conductivity measurements are also discussed in the paper.

Citation Download Citation

Ashish Bhatia, M. A. Karmarkar, H. Meadows, P. J. Dale, and M. A. Scarpulla "Grain growth study of electrochemically deposited CuInSe2 by rapid thermal annealing in sulfur atmosphere", Proc. SPIE 8549, 16th International Workshop on Physics of Semiconductor Devices, 85493B (15 October 2012); https://doi.org/10.1117/12.926972

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