Determination of the density-of-states function in highly degenerate semiconductors in the existence of electric field strength

Subhamoy Singha Roy

doi:10.1117/12.970544

19 November 2012 Determination of the density-of-states function in highly degenerate semiconductors in the existence of electric field strength

Subhamoy Singha Roy

Author Affiliations +

Proceedings Volume 8542, Electro-Optical Remote Sensing, Photonic Technologies, and Applications VI; 85421H (2012) https://doi.org/10.1117/12.970544
Event: SPIE Security + Defence, 2012, Edinburgh, United Kingdom

Abstract

An attempt is made to study the energy spectrum of the transmission electrons and analogous density-of-states function of degenerate semiconductors in the occurrence of an electric field strength. It is found, captivating n-GaAs as an example that the isotropic parabolic energy spectrum converts into an anisotropic dispersion relation with energy dependent mass anisotropy in the occurrence of electric field strength. In addition the band gap increases with electric field strength and the carriers vanish from the transmission band edge after definite value of the electric field strength. The eminent consequence of the density-of-states function for non-degenerate wide gap optical and optoelectronic materials with parabolic energy band has been obtained as special cases of our generalized theory under definite limiting background from our generalized term when electric field strength is zero.

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Subhamoy Singha Roy "Determination of the density-of-states function in highly degenerate semiconductors in the existence of electric field strength", Proc. SPIE 8542, Electro-Optical Remote Sensing, Photonic Technologies, and Applications VI, 85421H (19 November 2012); https://doi.org/10.1117/12.970544

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