In this paper, we will present the needs and mechanisms for simultaneous OPC for both masks, the extra freedom avaliable in DP OPC, and the extra consideration needed in developing LELE OPC recipe such as SRAF insertion. biasing. |
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CITATIONS
Cited by 2 scholarly publications.
Optical proximity correction
Double patterning technology
Current controlled current source
Lithography
Photomask technology
Photomasks
SRAF