Optical properties of SbSI heterostructures

B. Toroń; M. Nowak; A. Grabowski; M. Kępńiska; J. Szala; T. Rzychoń

doi:10.1117/12.978937

24 October 2012 Optical properties of SbSI heterostructures

B. Toroń, M. Nowak, A. Grabowski, M. Kępńiska, J. Szala, T. Rzychoń

Proceedings Volume 8497, Photonic Fiber and Crystal Devices: Advances in Materials and Innovations in Device Applications VI; 84971K (2012) https://doi.org/10.1117/12.978937
Event: SPIE Optical Engineering + Applications, 2012, San Diego, California, United States

Abstract

The antimony sulfoiodide (SbSI) single crystal being a ferroelectric semiconductor has a large number of interesting properties. Based on SbSI single crystal a new type of heterostructures has been produced. For the first time diodes, transistors and thyristors composed of SbSI/Sb₂S₃ heterojunctions have been fabricated by CO₂ laser irradiation of selected sections of SbSI single crystals. Treated sections are composed of amorphous antimony (III) sulphide (Sb₂S₃) with energy gap 0.3 eV smaller (in room temperature) than that of SbSI. The structural optical, electrical and photoelectrical characteristics of produced devices have been investigated.

Citation Download Citation

B. Toroń, M. Nowak, A. Grabowski, M. Kępńiska, J. Szala, and T. Rzychoń "Optical properties of SbSI heterostructures", Proc. SPIE 8497, Photonic Fiber and Crystal Devices: Advances in Materials and Innovations in Device Applications VI, 84971K (24 October 2012); https://doi.org/10.1117/12.978937

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