Paper
27 September 2012 Chemical vapor deposition of graphene on copper at reduced temperatures
Eric M. Gallo, Bruce I. Willner, Jeonghyun Hwang, Shangzhu Sun, Michael Spencer, Tom Salagaj, William C. Mitchel, Nick Sbrockey, Gary S. Tompa
Author Affiliations +
Abstract
A preliminary study on reduced temperature chemical vapor deposition of graphene on copper substrates was performed. Graphene's exceptional mechanical strength, very high electrical and thermal conductivity, and stability at atomic layer thicknesses, generates potential for a broad range of applications, from nanodevices to transparent conductor to chemical sensor. Of the techniques demonstrated for graphene formation, chemical vapor deposition is the sole process suitable for manufacturing large area films. While large area film deposition of graphene has been shown on metal substrates, this process has been limited to high temperatures, 900-1000C, which increases the cost of production and limits methods of integrating the graphene with other material structures. In this work, CVD of graphene on copper foil was attempted over a range of temperatures (650 - 950C) on substrates as large as 5 x 15 cm in a horizontal tube reactor. Depositions were performed using both CVD and upstream Plasma-Enhanced CVD (PECVD), and the results are compared for both techniques. Quality of graphene films deposited with and without plasma enhancement was characterized by micro Raman spectroscopy.
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Eric M. Gallo, Bruce I. Willner, Jeonghyun Hwang, Shangzhu Sun, Michael Spencer, Tom Salagaj, William C. Mitchel, Nick Sbrockey, and Gary S. Tompa "Chemical vapor deposition of graphene on copper at reduced temperatures", Proc. SPIE 8462, Carbon Nanotubes, Graphene, and Associated Devices V, 846203 (27 September 2012); https://doi.org/10.1117/12.929094
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Cited by 2 scholarly publications.
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KEYWORDS
Graphene

Plasma

Copper

Chemical vapor deposition

Raman spectroscopy

Annealing

Silicon carbide

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