Positive magnetoresistance in hydrogenated amorphous alloys silicon nickel a- Si1-yNiy:H at very low temperature with magnetic field

Abdelfattah Narjis; Abdelhamid El Kaaouachi; Abdelghani Sybous; Lhoussine Limouny; Gerard Biskupski; Said Dlimi

doi:10.1117/12.924297

27 September 2012 Positive magnetoresistance in hydrogenated amorphous alloys silicon nickel a- Si1-yNiy:H at very low temperature with magnetic field

Abdelfattah Narjis, Abdelhamid El Kaaouachi, Abdelghani Sybous, Lhoussine Limouny, Gerard Biskupski, Said Dlimi

Author Affiliations +

Proceedings Volume 8459, Physical Chemistry of Interfaces and Nanomaterials XI; 84590U (2012) https://doi.org/10.1117/12.924297
Event: SPIE NanoScience + Engineering, 2012, San Diego, California, United States

Abstract

We present results of an experimental study of magnetoresistance phenomenon in an amorphous siliconnickel alloys a-Si1-yNiy:H (where y=0.23) on the insulating side of the metal-insulator transition (MIT) in presence of magnetic field up to 4,5T and at very low temperature. The electrical resistivity is found to follow the Efros-Shklovskii Variable Range Hopping regime (ES VRH) with T -1/2. This behaviour indicates the existence of the Coulomb gap (CG) near the Fermi level.

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Abdelfattah Narjis, Abdelhamid El Kaaouachi, Abdelghani Sybous, Lhoussine Limouny, Gerard Biskupski, and Said Dlimi "Positive magnetoresistance in hydrogenated amorphous alloys silicon nickel a- Si1-yNiy:H at very low temperature with magnetic field", Proc. SPIE 8459, Physical Chemistry of Interfaces and Nanomaterials XI, 84590U (27 September 2012); https://doi.org/10.1117/12.924297

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