Optimization and shape control of GaN nanopillars fabricated by inductively coupled plasma etching

Dipak Paramanik; Abhishek Motayed; Geetha S. Aluri; Sergiy Krylyuk; Albert V. Davydov; Matthew King; Sean McLaughlin; Shalini Gupta; Harlan Cramer; Babak Nikoobakht

doi:10.1117/12.920836

7 May 2012 Optimization and shape control of GaN nanopillars fabricated by inductively coupled plasma etching

Dipak Paramanik, Abhishek Motayed, Geetha S. Aluri, Sergiy Krylyuk, Albert V. Davydov, Matthew King, Sean McLaughlin, Shalini Gupta, Harlan Cramer, Babak Nikoobakht

Author Affiliations +

Proceedings Volume 8373, Micro- and Nanotechnology Sensors, Systems, and Applications IV; 83732V (2012) https://doi.org/10.1117/12.920836
Event: SPIE Defense, Security, and Sensing, 2012, Baltimore, Maryland, United States

Abstract

We report the systematic etching profile of GaN nano pillar structures using inductively coupled plasma (ICP) etching techniques. We were able to control the side wall angle, shape and dimension of such nanoscale structures by carefully selecting the etching parameters. We present the effects of variations of the etch parameters, such as ICP power, RF power, chamber pressure, and substrate temperature on the etch characteristics, such as etch rate, sidewall angle, anisotropy, mask erosion, and surface roughness. Utilizing such methods, we demonstrated the fabrication of nanoscale structures with designed shapes and dimensions over large area. Nanocolumns with diameter of 120 nm and height of 1.6 μm with sidewall angle of 86° (90° represent a vertical sidewall) were fabricated. Nanocones with tip diameter of 30 nm and height of 1.6 μm with sidewall angle of 70° were demonstrated. The structures produced by such top-down method could potentially be used in light-emitting diodes, laser diodes, photodetectors, vertical transistors, fieldemitters, and photovoltaic devices.

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Dipak Paramanik, Abhishek Motayed, Geetha S. Aluri, Sergiy Krylyuk, Albert V. Davydov, Matthew King, Sean McLaughlin, Shalini Gupta, Harlan Cramer, and Babak Nikoobakht "Optimization and shape control of GaN nanopillars fabricated by inductively coupled plasma etching", Proc. SPIE 8373, Micro- and Nanotechnology Sensors, Systems, and Applications IV, 83732V (7 May 2012); https://doi.org/10.1117/12.920836

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KEYWORDS

Etching

Gallium nitride

Ions

Nanolithography

Photomasks

Plasma etching

Chemistry

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