The near field characteristics of the focused field embedded in the super-RENS layer applied to lithography

A. C. Assafrao; S. F. Pereira; H. P. Urbach

doi:10.1117/12.916368

13 March 2012 The near field characteristics of the focused field embedded in the super-RENS layer applied to lithography

A. C. Assafrao, S. F. Pereira, H. P. Urbach

Author Affiliations +

Proceedings Volume 8326, Optical Microlithography XXV; 832621 (2012) https://doi.org/10.1117/12.916368
Event: SPIE Advanced Lithography, 2012, San Jose, California, United States

Abstract

We present a rigorous numerical model to study the near-field characteristics of the focused spot embedded in a Super Resolution Near Field stack layer. The results indicate that a focused spot beyond the diffraction limit can be achieved and its characteristics can be modeled by proper choice of optical parameters.

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A. C. Assafrao, S. F. Pereira, and H. P. Urbach "The near field characteristics of the focused field embedded in the super-RENS layer applied to lithography", Proc. SPIE 8326, Optical Microlithography XXV, 832621 (13 March 2012); https://doi.org/10.1117/12.916368

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