CDU prediction based on in-situ image measurements

A. Bourov; J. R. Cheng; L. Duan; J. Yang; J. Min

doi:10.1117/12.916629

13 March 2012 CDU prediction based on in-situ image measurements

A. Bourov, J. R. Cheng, L. Duan, J. Yang, J. Min

Proceedings Volume 8326, Optical Microlithography XXV; 83261T (2012) https://doi.org/10.1117/12.916629
Event: SPIE Advanced Lithography, 2012, San Jose, California, United States

Abstract

Control of CD uniformity is a key aspect of IC manufacturing. Ability to accurately predict wafer-measured CD prior to exposure is critical to CDU control. In this paper we present a method to calculate a predicted CD value based on in-situ measurements, and estimate CD uniformity across the field of an exposure tool. This method is based on direct measurements of aerial image using a sensor built into the wafer stage of SMEE SSA600-series exposure scanners. Using this sensor to measure image of several features at 9 points across the exposure field, we compare predicted CD and ADI CD obtained using a standard wafer process and CD-SEM.

Citation Download Citation

A. Bourov, J. R. Cheng, L. Duan, J. Yang, and J. Min "CDU prediction based on in-situ image measurements", Proc. SPIE 8326, Optical Microlithography XXV, 83261T (13 March 2012); https://doi.org/10.1117/12.916629

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