Advanced light source technologies that enable high-volume manufacturing of DUV lithography extensions

Theodore Cacouris; Rajasekhar Rao; Rostislav Rokitski; Rui Jiang; John Melchior; Bernd Burfeindt; Kevin O'Brien

doi:10.1117/12.917827

13 March 2012 Advanced light source technologies that enable high-volume manufacturing of DUV lithography extensions

Theodore Cacouris, Rajasekhar Rao, Rostislav Rokitski, Rui Jiang, John Melchior, Bernd Burfeindt, Kevin O'Brien

Proceedings Volume 8326, Optical Microlithography XXV; 83261G (2012) https://doi.org/10.1117/12.917827
Event: SPIE Advanced Lithography, 2012, San Jose, California, United States

Abstract

Deep UV (DUV) lithography is being applied to pattern increasingly finer geometries, leading to solutions like double- and multiple-patterning. Such process complexities lead to higher costs due to the increasing number of steps required to produce the desired results. One of the consequences is that the lithography equipment needs to provide higher operating efficiencies to minimize the cost increases, especially for producers of memory devices that experience a rapid decline in sales prices of these products over time. In addition to having introduced higher power 193nm light sources to enable higher throughput, we previously described technologies that also enable: higher tool availability via advanced discharge chamber gas management algorithms; improved process monitoring via enhanced on-board beam metrology; and increased depth of focus (DOF) via light source bandwidth modulation. In this paper we will report on the field performance of these technologies with data that supports the desired improvements in on-wafer performance and operational efficiencies.

Citation Download Citation

Theodore Cacouris, Rajasekhar Rao, Rostislav Rokitski, Rui Jiang, John Melchior, Bernd Burfeindt, and Kevin O'Brien "Advanced light source technologies that enable high-volume manufacturing of DUV lithography extensions", Proc. SPIE 8326, Optical Microlithography XXV, 83261G (13 March 2012); https://doi.org/10.1117/12.917827

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