Paper
13 March 2012 Free form source and mask optimization for negative tone resist development for 22nm node contact holes
Tamer H. Coskun, Huixiong Dai, Vishnu Kamat, Ching-Mei Hsu, Gaetano Santoro, Chris Ngai, Mario Reybrouck, Grozdan Grozev, Hsu-Ting Huang
Author Affiliations +
Abstract
In this paper we demonstrate the feasibility of Negative Tone Development (NTD) process to pattern 22nm node contact holes leveraging freeform source and model based assist features. We demonstrate this combined technology with detailed simulation and wafer results. Analysis also includes further improvement achievable using a freeform source compared to a conventional standard source while keeping the mask optimization approaches the same. Similar studies are performed using the Positive Tone Development (PTD) process to demonstrate the benefits of the NTD process.
© (2012) COPYRIGHT Society of Photo-Optical Instrumentation Engineers (SPIE). Downloading of the abstract is permitted for personal use only.
Tamer H. Coskun, Huixiong Dai, Vishnu Kamat, Ching-Mei Hsu, Gaetano Santoro, Chris Ngai, Mario Reybrouck, Grozdan Grozev, and Hsu-Ting Huang "Free form source and mask optimization for negative tone resist development for 22nm node contact holes", Proc. SPIE 8326, Optical Microlithography XXV, 83260V (13 March 2012); https://doi.org/10.1117/12.918459
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CITATIONS
Cited by 3 scholarly publications.
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KEYWORDS
Photomasks

Source mask optimization

Semiconducting wafers

Image processing

Electroluminescence

Nanoimprint lithography

Standards development

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