Interactions between imaging layers during LPLE double patterning lithography

Stewart Robertson; Patrick Wong; Peter De Bisschop; Nadia Vandenbroeck; Vincent Wiaux

doi:10.1117/12.918058

13 March 2012 Interactions between imaging layers during LPLE double patterning lithography

Stewart Robertson, Patrick Wong, Peter De Bisschop, Nadia Vandenbroeck, Vincent Wiaux

Proceedings Volume 8326, Optical Microlithography XXV; 83260B (2012) https://doi.org/10.1117/12.918058
Event: SPIE Advanced Lithography, 2012, San Jose, California, United States

Abstract

In previous work, a rigorous physical model was developed to describe a thermal freeze LPLE (Litho-Process- Litho- Etch) process. Subsequent experimental studies revealed a significant CD correlation between the CD of the litho 2 pattern and that of the litho 1 pattern, when the features are inter-digitated. Simulation of the experiment shows similar behavior, although the predicted magnitude is incorrect. Experimentation with the model reveals that the behavior is driven by three mechanisms; the mis-match of the index of refraction between the two resist, the acid/quencher diffusion boundary between the resist materials and finally optical lensing effects caused by the non-planar surface of the second resist as it covers the features defined in the first resist. Once the mechanisms are identified the model is recalibrated with significantly improved accuracy.

Citation Download Citation

Stewart Robertson, Patrick Wong, Peter De Bisschop, Nadia Vandenbroeck, and Vincent Wiaux "Interactions between imaging layers during LPLE double patterning lithography", Proc. SPIE 8326, Optical Microlithography XXV, 83260B (13 March 2012); https://doi.org/10.1117/12.918058

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