EUV resist performance: current assessment for sub-22-nm half-pitch patterning on NXE:3300

T. Wallow; D. Civay; S. Wang; H. F. Hoefnagels; C. Verspaget; G. Tanriseven; A. Fumar-Pici; S. Hansen; J. Schefske; M. Singh; R. Maas; Y. van Dommelen; J. Mallman

doi:10.1117/12.918039

23 March 2012 EUV resist performance: current assessment for sub-22-nm half-pitch patterning on NXE:3300

T. Wallow, D. Civay, S. Wang, H. F. Hoefnagels, C. Verspaget, G. Tanriseven, A. Fumar-Pici, S. Hansen, J. Schefske, M. Singh, R. Maas, Y. van Dommelen, J. Mallman

Author Affiliations +

Proceedings Volume 8322, Extreme Ultraviolet (EUV) Lithography III; 83221J (2012) https://doi.org/10.1117/12.918039
Event: SPIE Advanced Lithography, 2012, San Jose, California, United States

Abstract

The major challenge for EUV resists at 22 nm half-pitch and below continues to be simultaneously achieving resolution, sensitivity, and line-width roughness (LWR) targets. An ongoing micro-exposure tool (MET) based evaluation of leading resists throughout 2011 shows that incremental progress toward meeting requirements continues apace, with best-of-breed candidates now capable of limiting 19 nm half-pitch resolution at sensitivities near or below 20 mJ/cm² and LWR below 4 nm 3σ through process window. Evaluation of a selection of leading resists using an ASML NXE:3100 2nd generation full-field exposure tool demonstrates key performance improvements vs. the previous process-of- record (POR) setup resist including enhanced process window at 22 nm half-pitch and better contact hole uniformity. Champion limiting resolution performance for chemically amplified resists at a relaxed sensitivity specification has advanced to 16 nm half-pitch for both MET and full-field exposures.

Citation Download Citation

T. Wallow, D. Civay, S. Wang, H. F. Hoefnagels, C. Verspaget, G. Tanriseven, A. Fumar-Pici, S. Hansen, J. Schefske, M. Singh, R. Maas, Y. van Dommelen, and J. Mallman "EUV resist performance: current assessment for sub-22-nm half-pitch patterning on NXE:3300", Proc. SPIE 8322, Extreme Ultraviolet (EUV) Lithography III, 83221J (23 March 2012); https://doi.org/10.1117/12.918039

ACCESS THE FULL ARTICLE

INSTITUTIONAL
Select your institution to access the SPIE Digital Library.

SELECT YOUR INSTITUTION

PERSONAL
Sign in with your SPIE account to access your personal subscriptions or to use specific features such as save to my library, sign up for alerts, save searches, etc.

PERSONAL SIGN IN

No SPIE Account? Create one

PURCHASE THIS CONTENT

SUBSCRIBE TO DIGITAL LIBRARY

50 downloads per 1-year subscription

Members: $195

Non-members: $335 ADD TO CART

25 downloads per 1 - year subscription

Members: $145

Non-members: $250 ADD TO CART

PURCHASE SINGLE ARTICLE

Includes PDF, HTML & Video, when available