Theoretical estimation of optical absorption coefficient inside an InAs/InGaAs semiconductor quantum dot

Sadreddin Behjati Ardakani; Hassan Kaatuzian

doi:10.1117/12.904171

28 November 2011 Theoretical estimation of optical absorption coefficient inside an InAs/InGaAs semiconductor quantum dot

Sadreddin Behjati Ardakani, Hassan Kaatuzian

Author Affiliations +

Proceedings Volume 8308, Optoelectronic Materials and Devices VI; 83080L (2011) https://doi.org/10.1117/12.904171
Event: SPIE/OSA/IEEE Asia Communications and Photonics, 2011, Shanghai, China

Abstract

In this work we extract a novel formula for optical absorption coefficient of Quantum Dots (QDs) in frame of 8band k.p modeling. Also this is useful for any other several band k.p frame. Using this formula, we analyze and simulate absorption spectra for a typical InAs/In_0.4Ga_0.6As QD, both for TE and TM components of absorption spectra. Size and alloy fraction of QD is chosen such that the absorption spectra has some components around 1.55μm that will be applicable for single photon fiber optic communication.

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Sadreddin Behjati Ardakani and Hassan Kaatuzian "Theoretical estimation of optical absorption coefficient inside an InAs/InGaAs semiconductor quantum dot", Proc. SPIE 8308, Optoelectronic Materials and Devices VI, 83080L (28 November 2011); https://doi.org/10.1117/12.904171

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