Paper
9 August 1988 Grazing Incidence Reflectance Of SiC Films Produced By Plasma-Assisted Chemical Vapor Deposition
Ritva A. M. Keski-Kuha, John F. Osantowski, Albert R. Toft, William D. Partlow
Author Affiliations +
Abstract
The grazing incidence reflectance of silicon carbide films produced by plasma-assisted chemical vapor deposition has been evaluated in the spectral region from 256 to 1216 Å. The results show that reflectivities higher than conventional coatings can be obtained on coatings deposited both on silicon wafers and quartz substrates. Potential application of silicon carbide films for EUV astronomical instruments will be discussed.
© (1988) COPYRIGHT Society of Photo-Optical Instrumentation Engineers (SPIE). Downloading of the abstract is permitted for personal use only.
Ritva A. M. Keski-Kuha, John F. Osantowski, Albert R. Toft, and William D. Partlow "Grazing Incidence Reflectance Of SiC Films Produced By Plasma-Assisted Chemical Vapor Deposition", Proc. SPIE 0830, Grazing Incidence Optics for Astronomical and Laboratory Applications, (9 August 1988); https://doi.org/10.1117/12.942196
Advertisement
Advertisement
RIGHTS & PERMISSIONS
Get copyright permission  Get copyright permission on Copyright Marketplace
KEYWORDS
Silicon carbide

Reflectivity

Chemical vapor deposition

Polishing

Grazing incidence

Plasma

Silicon films

RELATED CONTENT

Thick, fine-grained beryllium optical coatings
Proceedings of SPIE (September 01 1991)
SiC coatings on RB SiC mirrors for ultrasmooth surfaces
Proceedings of SPIE (December 06 1993)
Grazing Incidence Imaging From 10 To 40 KeV
Proceedings of SPIE (August 09 1988)
EUV near normal incidence collector development at SAGEM
Proceedings of SPIE (April 03 2008)

Back to Top