Detailed modeling of integrated IQ-transmitters for 100G+ applications

A. Richter; C. Arellano; D. Carrara; S. Mingaleev; E. Sokolov; I. Koltchanov

doi:10.1117/12.912096

24 January 2012 Detailed modeling of integrated IQ-transmitters for 100G+ applications

A. Richter, C. Arellano, D. Carrara, S. Mingaleev, E. Sokolov, I. Koltchanov

Proceedings Volume 8284, Next-Generation Optical Communication: Components, Sub-Systems, and Systems; 82840L (2012) https://doi.org/10.1117/12.912096
Event: SPIE OPTO, 2012, San Francisco, California, United States

Abstract

We present techniques for modeling the physics and systems-level characteristics of integrated IQ-transmitters for 100G+ applications and emphasize important design aspects. Using time-and-frequency-domain modeling (TFDM) of Photonic Integrated Circuits (PIC), we present a detailed IQ-transmitter model based on the physics and setup of active and passive subcomponents. With this, we link characteristics of subcomponents (bending loss of waveguides, phase changes in MMI couplers, sweep-out time of EAMs) to systems-level characteristics of the integrated IQ-transmitter (extinction ratio, modulation bandwidth, chirp). Further, a behavioral transmitter model is introduced and utilized to assess electrical driving requirements (allowed jitter, noise, synchronization offset).

Citation Download Citation

A. Richter, C. Arellano, D. Carrara, S. Mingaleev, E. Sokolov, and I. Koltchanov "Detailed modeling of integrated IQ-transmitters for 100G+ applications", Proc. SPIE 8284, Next-Generation Optical Communication: Components, Sub-Systems, and Systems, 82840L (24 January 2012); https://doi.org/10.1117/12.912096

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