Paper
20 January 2012 Full-scale self-emissive blue and green microdisplays based on GaN micro-LED arrays
J. Day, J. Li, D. Y. C. Lie, C. Bradford, J. Y. Lin, H. X. Jiang
Author Affiliations +
Abstract
Micro-size light emitting diode (μLED) arrays based on III-nitride semiconductors have emerged as a promising technology for a wide range of applications. If InGaN μLED arrays can be integrated on to Si complementary metal-oxide-semiconductor (CMOS) substrates for active driving, these devices could play crucial roles in ultra-portable products such as next generation pico-projectors, as well as in emerging fields such as biophotonics and optogenetics. Here we present a demonstration of, and methods for, creating a highresolution solid-state self-emissive microdisplay based on InGaN/GaN semiconductors. An energy efficient active drive scheme is accomplished by integrating micro-emitter arrays with CMOS active matrix drivers that are flip-chip bonded together via indium metal bumps.
© (2012) COPYRIGHT Society of Photo-Optical Instrumentation Engineers (SPIE). Downloading of the abstract is permitted for personal use only.
J. Day, J. Li, D. Y. C. Lie, C. Bradford, J. Y. Lin, and H. X. Jiang "Full-scale self-emissive blue and green microdisplays based on GaN micro-LED arrays", Proc. SPIE 8268, Quantum Sensing and Nanophotonic Devices IX, 82681X (20 January 2012); https://doi.org/10.1117/12.914061
Lens.org Logo
CITATIONS
Cited by 19 scholarly publications and 2 patents.
Advertisement
Advertisement
RIGHTS & PERMISSIONS
Get copyright permission  Get copyright permission on Copyright Marketplace
KEYWORDS
Indium gallium nitride

Light emitting diodes

Indium

Semiconductors

Gallium nitride

Metals

Sapphire

Back to Top