Analysis of radiation hardness and subcell I-V characteristics of GaInP/GaAs/Ge solar cells using electroluminescence measurements

R. Hoheisel; S. Messenger; D. Scheiman; P. P. Jenkins; R. J. Walters

doi:10.1117/12.910031

21 February 2012 Analysis of radiation hardness and subcell I-V characteristics of GaInP/GaAs/Ge solar cells using electroluminescence measurements

R. Hoheisel, S. Messenger, D. Scheiman, P. P. Jenkins, R. J. Walters

Author Affiliations +

Proceedings Volume 8256, Physics, Simulation, and Photonic Engineering of Photovoltaic Devices; 82561X (2012) https://doi.org/10.1117/12.910031
Event: SPIE OPTO, 2012, San Francisco, California, United States

Abstract

The voltage degradation of GaInP/GaAs/Ge triple-junction solar cells after exposure to proton irradiation is analyzed using electroluminescence (EL) measurements. It is shown that EL measurements in combination with the reciprocity relationship allow accurate determination of the degradation of the open-circuit voltage (V_oc) of each individual subcell. The impact of different proton energies on the voltage degradation of each subcell is analyzed. For solar cells exposed to extremely high radiation levels, a correlation between the degradation of the quantum efficiency of the Ge subcell and its EL properties is presented.

Citation Download Citation

R. Hoheisel, S. Messenger, D. Scheiman, P. P. Jenkins, and R. J. Walters "Analysis of radiation hardness and subcell I-V characteristics of GaInP/GaAs/Ge solar cells using electroluminescence measurements", Proc. SPIE 8256, Physics, Simulation, and Photonic Engineering of Photovoltaic Devices, 82561X (21 February 2012); https://doi.org/10.1117/12.910031

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