Spin filtering in monolayer graphene by using an electro-magnetostatic barrier

Roya Jalali; Edris Faizabadi

doi:10.1117/12.892966

19 September 2011 Spin filtering in monolayer graphene by using an electro-magnetostatic barrier

Roya Jalali, Edris Faizabadi

Proceedings Volume 8101, Carbon Nanotubes, Graphene, and Associated Devices IV; 81010U (2011) https://doi.org/10.1117/12.892966
Event: SPIE NanoScience + Engineering, 2011, San Diego, California, United States

Abstract

Graphene has recently attracted many attentions for some special properties. One of the most important advantages of graphene is its very high electron mobility, which is essential to manipulate high-speed next generation transistors and other nano-electronic devices. Besides, because of the thin layer of carbon atoms in graphene, we can make ultra-small and extremely fast devices. In this research, we have considered a monolayer graphene subjected to an electro-magneto static field. By solving the Dirac equation analytically and finding the spin-dependent transmission probability for electrons through the barrier constructed by the electro-magneto static field, we have evaluated spin polarization in different conditions. Our results show there is no reduction in transmission for electrons that vertically go through the barrier. In other words, we have unit transmission probability at normal incidence, which is in complete accord with Klein paradox. In this case, there is not any polarization. However, spin polarization can be seen by increasing the incident angle. In some special magnetic field strengths and incident angels, spin-filtering can be occurred, in which only electrons with either spin-up or spin-down can pass through the barrier. Due to this fact, many graphene-base spintronic devices can be exploited in the near future.

Citation Download Citation

Roya Jalali and Edris Faizabadi "Spin filtering in monolayer graphene by using an electro-magnetostatic barrier", Proc. SPIE 8101, Carbon Nanotubes, Graphene, and Associated Devices IV, 81010U (19 September 2011); https://doi.org/10.1117/12.892966

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