Etch durable spin-on hard mask

Makoto Muramatsu; Mitsuaki Iwashita; Takashi Kondo; Hisashi Hirose; Seiji Fujimoto

doi:10.1117/12.878863

15 April 2011 Etch durable spin-on hard mask

Makoto Muramatsu, Mitsuaki Iwashita, Takashi Kondo, Hisashi Hirose, Seiji Fujimoto

Proceedings Volume 7972, Advances in Resist Materials and Processing Technology XXVIII; 797226 (2011) https://doi.org/10.1117/12.878863
Event: SPIE Advanced Lithography, 2011, San Jose, California, United States

Abstract

As decreasing the device feature size, the film stack structure used in resist process is also changing. Especially multilayer stack film structure is getting popular for pattern formation on critical layers. Our approach is to form a spin-on hard mask film with high etch resistance by introduction of a new baking function. The results show that a spin-on hard mask film processed by an underlayer coating system of Tokyo Electron Ltd. (TEL) has drastically improved etch resistance compared to a conventional system. We will report the availability of new underlayer system using several kinds of underlayer materials.

Citation Download Citation

Makoto Muramatsu, Mitsuaki Iwashita, Takashi Kondo, Hisashi Hirose, and Seiji Fujimoto "Etch durable spin-on hard mask", Proc. SPIE 7972, Advances in Resist Materials and Processing Technology XXVIII, 797226 (15 April 2011); https://doi.org/10.1117/12.878863

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