High Transconductance OGFETs

G. Ebert; A. Colquhoun

doi:10.1117/12.941057

22 April 1987 High Transconductance OGFETs

G. Ebert, A. Colquhoun

Proceedings Volume 0797, Advanced Processing of Semiconductor Devices; (1987) https://doi.org/10.1117/12.941057
Event: Advances in Semiconductors and Semiconductor Structures, 1987, Bay Point, FL, United States

Abstract

Submicron channel MESFETs with a special electrode arrangement, previously described by Colquhoun and Ebert l have been fabricated and characterized. This overlapped gate configuration allows the channel length of the device to be substantially shorter than the gate metallization length. An extrinsic transconductance of more than 240 mS/mm, and a cutoff frequency fmax of 20 GHz have been obtained. Special care was taken to avoid parasitic current saturation effects in the ungated drain region by using a gate recess.

Citation Download Citation

G. Ebert and A. Colquhoun "High Transconductance OGFETs", Proc. SPIE 0797, Advanced Processing of Semiconductor Devices, (22 April 1987); https://doi.org/10.1117/12.941057

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