Development of EUV resist for 22nm half pitch and beyond

Kouta Nishino; Ken Maruyama; Tooru Kimura; Toshiyuki Kai; Kentaro Goto; Shalini Sharma

doi:10.1117/12.879430

8 April 2011 Development of EUV resist for 22nm half pitch and beyond

Kouta Nishino, Ken Maruyama, Tooru Kimura, Toshiyuki Kai, Kentaro Goto, Shalini Sharma

Proceedings Volume 7969, Extreme Ultraviolet (EUV) Lithography II; 79692I (2011) https://doi.org/10.1117/12.879430
Event: SPIE Advanced Lithography, 2011, San Jose, California, United States

Abstract

Extreme ultraviolet (EUV) lithography is one of the most promising candidates for next generation lithography (NGL) that can print 22nmhp and beyond. In order to implement EUV technology, resist is one of the critical items that require significant improvement in overall performance. In order to achieve these improvements, many research groups are developing new materials such as molecular glass (MG) polymer bound photo-acid generator (PAG) high quantum yield PAG, sensitizer and high absorption resin. In this study, we focused on innovative PAG materials and correlated PAG acid diffusion length to lithography performance. As a result, new resist designs with improved resolution, LWR, sensitivity are reported.

Citation Download Citation

Kouta Nishino, Ken Maruyama, Tooru Kimura, Toshiyuki Kai, Kentaro Goto, and Shalini Sharma "Development of EUV resist for 22nm half pitch and beyond", Proc. SPIE 7969, Extreme Ultraviolet (EUV) Lithography II, 79692I (8 April 2011); https://doi.org/10.1117/12.879430

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