Defect Characterization In InP Epitaxial Layers Grown By LP-MOCVD

A. M. Huber; J. di Persio; M. A. di Forte-Poisson; C. Brylinski; R. Bisaro; C. Grattepain; O. Lagorsse

doi:10.1117/12.941015

20 April 1987 Defect Characterization In InP Epitaxial Layers Grown By LP-MOCVD

A. M. Huber, J. di Persio, M. A. di Forte-Poisson, C. Brylinski, R. Bisaro, C. Grattepain, O. Lagorsse

Proceedings Volume 0796, Growth of Compound Semiconductors; (1987) https://doi.org/10.1117/12.941015
Event: Advances in Semiconductors and Semiconductor Structures, 1987, Bay Point, FL, United States

Abstract

This paper reports some new experimental results concerning InP epitaxy by LP-MOCVD using chemical angle polishing and a sensitive etching technique to characterize the defect morphology of the complete InP layer, interface and substrate. The distribution of defects is associated with the SIMS determined As and Ga content.

Citation Download Citation

A. M. Huber, J. di Persio, M. A. di Forte-Poisson, C. Brylinski, R. Bisaro, C. Grattepain, and O. Lagorsse "Defect Characterization In InP Epitaxial Layers Grown By LP-MOCVD", Proc. SPIE 0796, Growth of Compound Semiconductors, (20 April 1987); https://doi.org/10.1117/12.941015

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