GaAs/GaInP double heterostructure characterization for laser cooling of semiconductors

Chengao Wang; Chia-Yeh Li; Michael P. Hasselbeck; Thomas Rotter; Kevin Malloy; Mansoor Sheik-Bahae; Jerry Olson

doi:10.1117/12.878979

9 February 2011 GaAs/GaInP double heterostructure characterization for laser cooling of semiconductors

Chengao Wang, Chia-Yeh Li, Michael P. Hasselbeck, Thomas Rotter, Kevin Malloy, Mansoor Sheik-Bahae, Jerry Olson

Proceedings Volume 7951, Laser Refrigeration of Solids IV; 79510D (2011) https://doi.org/10.1117/12.878979
Event: SPIE OPTO, 2011, San Francisco, California, United States

Abstract

External quantum efficiency of semiconductor photonic devices is directly measured by wavelength-dependent laser-induced temperature change (scanning laser calorimetry) with very high accuracy. Maximum efficiency is attained at an optimum photo-excitation level that can be determined with an independent measurement of power-dependent photoluminescence. Differential power-dependent photoluminescence measurement is used to quickly screen the sample quality before processing.

Citation Download Citation

Chengao Wang, Chia-Yeh Li, Michael P. Hasselbeck, Thomas Rotter, Kevin Malloy, Mansoor Sheik-Bahae, and Jerry Olson "GaAs/GaInP double heterostructure characterization for laser cooling of semiconductors", Proc. SPIE 7951, Laser Refrigeration of Solids IV, 79510D (9 February 2011); https://doi.org/10.1117/12.878979

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