Paper
17 January 2011 Defect mediated detection of wavelengths around 1550 nm in a ring resonant structure
Author Affiliations +
Proceedings Volume 7943, Silicon Photonics VI; 794308 (2011) https://doi.org/10.1117/12.874018
Event: SPIE OPTO, 2011, San Francisco, California, United States
Abstract
In this paper we outline recent results which combine defect mediated Photo-Detectors (PDs) in a Ring Resonator (RR) structure. By exploiting the multiple-pass of the optical signal through the detector, we are able to significantly decrease the size of the detector structure while maintaining good responsivity (typically 0.1 A/W). In such a geometry the detector bandwidth is not capacitance limited, while the leakage current is reduced toward 1 nA. We also show that these PDs may be used in the drop port of a RR to monitor the propagating signal. These devices have applicability in multiplexing and potential for integration with high speed modulation functionality.
© (2011) COPYRIGHT Society of Photo-Optical Instrumentation Engineers (SPIE). Downloading of the abstract is permitted for personal use only.
A. P. Knights, J. K. Doylend, D. F. Logan, J. J. Ackert, P. E. Jessop, P. Velha, M. Sorel, and R. M. De La Rue "Defect mediated detection of wavelengths around 1550 nm in a ring resonant structure", Proc. SPIE 7943, Silicon Photonics VI, 794308 (17 January 2011); https://doi.org/10.1117/12.874018
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KEYWORDS
Sensors

Waveguides

Silicon

Absorption

Defect detection

Palladium

Resonators

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