InP on SOI devices for optical communication and optical network on chip

J.-M. Fedeli; B. Ben Bakir; N. Olivier; Ph. Grosse; L. Grenouillet; E. Augendre; P. Phillippe; K. Gilbert; D. Bordel; J. Harduin

doi:10.1117/12.878607

18 January 2011 InP on SOI devices for optical communication and optical network on chip

J.-M. Fedeli, B. Ben Bakir, N. Olivier, Ph. Grosse, L. Grenouillet, E. Augendre, P. Phillippe, K. Gilbert, D. Bordel, J. Harduin

Author Affiliations +

Proceedings Volume 7942, Optoelectronic Integrated Circuits XIII; 79420O (2011) https://doi.org/10.1117/12.878607
Event: SPIE OPTO, 2011, San Francisco, California, United States

Abstract

For about ten years, we have been developing InP on Si devices under different projects focusing first on μlasers then on semicompact lasers. For aiming the integration on a CMOS circuit and for thermal issue, we relied on SiO₂ direct bonding of InP unpatterned materials. After the chemical removal of the InP substrate, the heterostructures lie on top of silicon waveguides of an SOI wafer with a separation of about 100nm. Different lasers or photodetectors have been achieved for off-chip optical communication and for intra-chip optical communication within an optical network. For high performance computing with high speed communication between cores, we developed InP microdisk lasers that are coupled to silicon waveguide and produced 100μW of optical power and that can be directly modulated up to 5G at different wavelengths. The optical network is based on wavelength selective circuits with ring resonators. InGaAs photodetectors are evanescently coupled to the silicon waveguide with an efficiency of 0.8A/W. The fabrication has been demonstrated at 200mm wafer scale in a microelectronics clean room for CMOS compatibility. For off-chip communication, silicon on InP evanescent laser have been realized with an innovative design where the cavity is defined in silicon and the gain localized in the QW of bonded InP hererostructure. The investigated devices operate at continuous wave regime with room temperature threshold current below 100 mA, the side mode suppression ratio is as high as 20dB, and the fibercoupled output power is ~7mW. Direct modulation can be achieved with already 6G operation.

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J.-M. Fedeli, B. Ben Bakir, N. Olivier, Ph. Grosse, L. Grenouillet, E. Augendre, P. Phillippe, K. Gilbert, D. Bordel, and J. Harduin "InP on SOI devices for optical communication and optical network on chip", Proc. SPIE 7942, Optoelectronic Integrated Circuits XIII, 79420O (18 January 2011); https://doi.org/10.1117/12.878607

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