Nb5N6 bolometer operated at room temperature for detecting at 100 GHz

L. Kang; X. H. Lu; J. Chen; C. H. Cao; W. W. Xu; B. B. Jin; P. H. Wu; Q. J. Yao; S. C. Shi

doi:10.1117/12.874578

23 February 2011 Nb₅N₆ bolometer operated at room temperature for detecting at 100 GHz

L. Kang, X. H. Lu, J. Chen, C. H. Cao, W. W. Xu, B. B. Jin, P. H. Wu, Q. J. Yao, S. C. Shi

Proceedings Volume 7938, Terahertz Technology and Applications IV; 79380F (2011) https://doi.org/10.1117/12.874578
Event: SPIE OPTO, 2011, San Francisco, California, United States

Abstract

Onto a double layer, which is made of a Si substrate ( ρ> 1000 Ω·cm ) and a SiO₂ layer 100 nm thick on top of it, a Nb₅N₆ thin film microbridge is deposited and integrated with an aluminum bow-tie planar antenna. With a SiO₂ air-bridge further fabricated underneath the microbridge and operated at room temperature, such a combination behaves very well as a bolometer for detecting signals at 100 GHz, thanks to a temperature coefficient of resistance (TCR) as high as -0.7% K^-1 of the Nb₅N₆ thin film. According to our estimations, the best attainable electrical responsivity of the bolometer is about -400 V/W at a current bias of 0.4 mA. The electrical noise equivalent power (NEP) is 6.9x10^-11 W/Hz^1/2 for a modulation frequency at 300 Hz and 9.8x10^-12 W/Hz^1/2 for a modulation frequency above 10 kHz respectively, which are better than those of commercial products (such as Golay cell and Schottky diode detectors). A quasi-optical receiver based on such a bolometer is constructed and measured.

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L. Kang, X. H. Lu, J. Chen, C. H. Cao, W. W. Xu, B. B. Jin, P. H. Wu, Q. J. Yao, and S. C. Shi "Nb₅N₆ bolometer operated at room temperature for detecting at 100 GHz", Proc. SPIE 7938, Terahertz Technology and Applications IV, 79380F (23 February 2011); https://doi.org/10.1117/12.874578

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