Thermo-optic coefficients of SiC, GaN, and AlN up to 512°C from infrared to ultraviolet region for tunable filter applications

Naoki Watanabe; Tsunenobu Kimoto; Jun Suda

doi:10.1117/12.874531

11 February 2011 Thermo-optic coefficients of SiC, GaN, and AlN up to 512°C from infrared to ultraviolet region for tunable filter applications

Naoki Watanabe, Tsunenobu Kimoto, Jun Suda

Author Affiliations +

Proceedings Volume 7926, Micromachining and Microfabrication Process Technology XVI; 792604 (2011) https://doi.org/10.1117/12.874531
Event: SPIE MOEMS-MEMS, 2011, San Francisco, California, United States

Abstract

The temperature dependence of the refractive indices of 4H-SiC, GaN, and AlN were investigated in a wavelength range from the near band edge (392 nm for SiC, 367 nm for GaN, and 217 nm for AlN) to infrared (1700 nm) and a temperature range from room temperature to 512°C. Optical interference measurements with vertical incident configuration were employed to precisely evaluate ordinary refractive indices. In visible region, the thermo-optic coefficient of GaN has the largest value in these materials. Optical simulation of GaN-based tunable band-pass filter with AlGaN/GaN distributed Bragg reflectors (DBRs) was also carried out by using the obtained thermo-optic coefficients. It revealed that 9 nm red-shift can be obtained from room temperature to 500°C.

Citation Download Citation

Naoki Watanabe, Tsunenobu Kimoto, and Jun Suda "Thermo-optic coefficients of SiC, GaN, and AlN up to 512°C from infrared to ultraviolet region for tunable filter applications", Proc. SPIE 7926, Micromachining and Microfabrication Process Technology XVI, 792604 (11 February 2011); https://doi.org/10.1117/12.874531

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