Paper
21 February 2011 Design and characterization of electrically pumped vertical external cavity surface emitting lasers
J. R. Orchard, D. T. D. Childs, L. C. Lin, B. J. Stevens, D. M. Williams, R. A. Hogg
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Abstract
The design of electrically pumped vertical external cavity surface emitting lasers (EP-VECSELs) for high power applications require a number of optimisations in design trade-offs, mainly that of doping for improved electrical performance and optical loss. Devices with diameter greater than 70μm and current spreading layer thickness of 100μm suffer from non-uniform carrier injection into the active region, below this diameter output power scales linearly with device area. We show CW powers of 133mW from a 150μm device with 4x1017cm-3 substrate doping at 0°C can be obtained.
© (2011) COPYRIGHT Society of Photo-Optical Instrumentation Engineers (SPIE). Downloading of the abstract is permitted for personal use only.
J. R. Orchard, D. T. D. Childs, L. C. Lin, B. J. Stevens, D. M. Williams, and R. A. Hogg "Design and characterization of electrically pumped vertical external cavity surface emitting lasers", Proc. SPIE 7919, Vertical External Cavity Surface Emitting Lasers (VECSELs), 79190K (21 February 2011); https://doi.org/10.1117/12.875126
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KEYWORDS
Semiconducting wafers

Doping

Mirrors

Vertical external cavity surface emitting lasers

Reflectivity

Quantum wells

Semiconductor lasers

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