Paper
21 February 2011 New developments of high-power single emitters and laser bars at JENOPTIK
M. Zorn, R. Hülsewede, H. Schulze, J. Sebastian, D. Schröder, P. Hennig
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Abstract
High-power single emitters and laser bars find several growing industrial applications such as materials processing. A steady increase in efficiency and output power is needed to conquer new markets. The development of high-end diode lasers usually starts with the development of the epitaxial structure. Therefore, simulations have been performed before the optimized layer structures have been tested using broad area (BA) lasers. Single emitter laser diodes are needed for fiber coupling with a minimal loss of light. We developed such emitters with high output powers at a small far field angle showing output powers of more than 20 W around 940 nm. The high-quality laser bars available at JENOPTIK have been improved and extended to new wavelength ranges. At the lower end, laser bars have been developed around and below 800 nm. At the higher end, design parameters have been optimized for 1060 nm emission wavelength.
© (2011) COPYRIGHT Society of Photo-Optical Instrumentation Engineers (SPIE). Downloading of the abstract is permitted for personal use only.
M. Zorn, R. Hülsewede, H. Schulze, J. Sebastian, D. Schröder, and P. Hennig "New developments of high-power single emitters and laser bars at JENOPTIK", Proc. SPIE 7918, High-Power Diode Laser Technology and Applications IX, 79180S (21 February 2011); https://doi.org/10.1117/12.874454
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Cited by 1 scholarly publication.
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KEYWORDS
Semiconductor lasers

Resonators

High power lasers

Laser applications

Laser processing

Laser resonators

Fiber coupled lasers

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