Carrier dynamics of doped silicon measured by femtosecond pump-terahertz probe spectroscopy

QingLi Zhou; YuLei Shi; Tong Li; Bin Jin; DongMei Zhao; CunLin Zhang

doi:10.1117/12.869894

4 November 2010 Carrier dynamics of doped silicon measured by femtosecond pump-terahertz probe spectroscopy

QingLi Zhou, YuLei Shi, Tong Li, Bin Jin, DongMei Zhao, CunLin Zhang

Proceedings Volume 7854, Infrared, Millimeter Wave, and Terahertz Technologies; 785430 (2010) https://doi.org/10.1117/12.869894
Event: Photonics Asia 2010, 2010, Beijing, China

Abstract

The carrier dynamics and terahertz photoconductivity in the n-type silicon (n-Si) as well as in the p-type Silicon (p- Si) have been investigated by using femtosecond pump-terahertz probe technique. The measurements show that the relative change of terahertz transmission of p-Si at low pump power is slightly lower than that of n-Si, due to the lower carrier density induced by the recombination of original holes in the p-type material and the photogenerated electrons. At high pump power, the bigger change of terahertz transmission of p-Si originates from the greater mobility of the carriers compared to n-Si. The transient photoconductivities are calculated and fit well with the Drude-Smith model, showing that the mobility of the photogenerated carriers decreases with the increasing pump power. The obtained results indicate that femtosecond pump-terahertz probe technique is a promising method to investigate the carrier dynamics of semiconductors.

Citation Download Citation

QingLi Zhou, YuLei Shi, Tong Li, Bin Jin, DongMei Zhao, and CunLin Zhang "Carrier dynamics of doped silicon measured by femtosecond pump-terahertz probe spectroscopy", Proc. SPIE 7854, Infrared, Millimeter Wave, and Terahertz Technologies, 785430 (4 November 2010); https://doi.org/10.1117/12.869894

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