The effects of annealing temperature on structure and photoluminescence of SiC/AlN bilayer thin film

Xiao-xiong He; He-qin Li; Wen-bin Fan; Zhi Do

doi:10.1117/12.870600

17 November 2010 The effects of annealing temperature on structure and photoluminescence of SiC/AlN bilayer thin film

Xiao-xiong He, He-qin Li, Wen-bin Fan, Zhi Do

Proceedings Volume 7847, Optoelectronic Devices and Integration III; 78472W (2010) https://doi.org/10.1117/12.870600
Event: Photonics Asia 2010, 2010, Beijing, China

Abstract

The SiC/AlN bilayer thin films were grown by RF magnetron sputtering on the silicon(100)substrate, then were annealed from 500°C to 1000°C through the nitrogen gas. The optimum synthetic process was obtained, that is, the gas pressure was 0.5Pa, the flux of Ar was 60sccm, the sputtering power of SiC target was 150W for 1.5hr, while the sputtering power of pure Al target was 100W for 1hr, and the ratio of Ar to N2 was 2:1. Next the XRD, AFM and photoluminescence (PL) spectra of these films were measured with D/Max-γB X-ray diffraction and FL-4500 Fluorometric meter. Two PL emission peaks were observed respectively around 381nm and 400nm, and they came from the SiC particles and the carbon clusters respectively. The intensity of PL emission rises with the increasing of annealing temperature. The PL emission intensity of SiC/AlN bilayer thin film at 381nm is superior to SiC monolayer thin film while the that of SiC/AlN bilayer at 400 nm is inferior to SiC monolayer thin film. In addition to, the grain size of SiC/AlN bilayer thin film is finer than that of SiC monolayer thin film resulting from AFM morphology.

Citation Download Citation

Xiao-xiong He, He-qin Li, Wen-bin Fan, and Zhi Do "The effects of annealing temperature on structure and photoluminescence of SiC/AlN bilayer thin film", Proc. SPIE 7847, Optoelectronic Devices and Integration III, 78472W (17 November 2010); https://doi.org/10.1117/12.870600

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