Paper
22 March 2011 2 μm InGaSb/GaSb laterally coupled distributed feedback laser fabricated by nanoimprint lithography
K. Haring, J. Viheriälä, M.-R. Viljanen, J. Paajaste, R. Koskinen, S. Suomalainen, A. Laakso, K. Leinonen, T. Niemi, M. Guina
Author Affiliations +
Proceedings Volume 7822, Laser Optics 2010; 782208 (2011) https://doi.org/10.1117/12.890260
Event: Laser Optics 2010, 2010, St. Petersburg, Russian Federation
Abstract
We report the development of a nanoimprint lithography patterning method and inductively coupled plasma etching recipe designed for GaSb-based semiconductor materials. The developed processes were used to fabricate edge-emitting ridge-waveguide lasers and laterally-coupled distributed feedback lasers operating at 1945 nm. For ridge-waveguide laser with 1 mm cavity length, a threshold current of 32 mA was measured. Side-mode suppression ratio in excess of 30 dB was measured for the distributed feedback lasers with 2 mW output power and the output wavelength was temperature-tunable with a tuning coefficient of 0.16 nm /°C.
© (2011) COPYRIGHT Society of Photo-Optical Instrumentation Engineers (SPIE). Downloading of the abstract is permitted for personal use only.
K. Haring, J. Viheriälä, M.-R. Viljanen, J. Paajaste, R. Koskinen, S. Suomalainen, A. Laakso, K. Leinonen, T. Niemi, and M. Guina "2 μm InGaSb/GaSb laterally coupled distributed feedback laser fabricated by nanoimprint lithography", Proc. SPIE 7822, Laser Optics 2010, 782208 (22 March 2011); https://doi.org/10.1117/12.890260
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KEYWORDS
Etching

Nanoimprint lithography

Cladding

Gallium antimonide

Laser processing

Semiconductors

Laser damage threshold

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