Nanometer-level alignment using interferometric-spatial-phase-imaging (ISPI) during silicon nanowire growth

Pornsak Srisungsitthisunti; Euclid E. Moon; Chookiat Tansarawiput; Huaichen Zhang; Minghao Qi; Xianfan Xu

doi:10.1117/12.860581

24 August 2010 Nanometer-level alignment using interferometric-spatial-phase-imaging (ISPI) during silicon nanowire growth

Pornsak Srisungsitthisunti, Euclid E. Moon, Chookiat Tansarawiput, Huaichen Zhang, Minghao Qi, Xianfan Xu

Author Affiliations +

Proceedings Volume 7767, Instrumentation, Metrology, and Standards for Nanomanufacturing IV; 776707 (2010) https://doi.org/10.1117/12.860581
Event: SPIE NanoScience + Engineering, 2010, San Diego, California, United States

Abstract

We describe a method of detecting nanometer-level gap and tip/tilt alignment between a focusing zone plate mask and a silicon substrate using interferometric-spatial-phase-imaging (ISPI). The zone plate mask is used to generate submicrometer focused light spot to induce silicon nanowire growth in a CVD process. ISPI makes use of diffracting fringes from gratings and checkerboards fabricated on the mask to determine the correct gapping distance for the focusing zone plates. The method is capable of detecting alignment inside a gas-flow chamber with variable pressure.

Citation Download Citation

Pornsak Srisungsitthisunti, Euclid E. Moon, Chookiat Tansarawiput, Huaichen Zhang, Minghao Qi, and Xianfan Xu "Nanometer-level alignment using interferometric-spatial-phase-imaging (ISPI) during silicon nanowire growth", Proc. SPIE 7767, Instrumentation, Metrology, and Standards for Nanomanufacturing IV, 776707 (24 August 2010); https://doi.org/10.1117/12.860581

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